Original document(13 pages) Authorized document(13 pages) 中文版
    A structure of nonvolatile memory is formed by a substrate, a stack grid structure and a source/drain region. The stack grid is on the substrate. The source/drain region in the substrate at the both sides of the stack grid. A vertical stepped channel dosed contour is formed in the substrate. It is devided into the first dosed region below the surface of the substrate and the second dosed region adjacent the first one. The concentration of the second one is higher than that of the first one.
Application Number
申请号		 01130920 Application Date
申请日		 2001.08.24
Title 名称 Non-volatility memory structure
Publication Number
公开号		 1407624 Publication Date
公开日		 2003.04.02
Approval Pub. Date 2006.11.22 Granted Pub. Date 2006.11.22
International Classification 分类号 H01L27/105
Applicant(s) Name
申请人		 Wanghong Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Fan Zuohong, Lu Daozheng
Attorney & Agent 代理人 wang huaqiang

  
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