Original document(6 pages)  中文版
    The electrode of indium antimonide Hall unit includes a cross-shaped sensitive film and an electrode. One end of said electrode is in ohmic contact with the cross-shaped sensitive film, and another end is attached to its base. This electrode is made up by such processes of first etching, evaporating electrode, secondary etching and alloying treatment in turns. The soldered dot of said electrode doesn't damage the sensitive film, and its firmness is good. The manufcturing process of said electrode is simple and easy to control.
Application Number
申请号
95111868 Application Date
申请日
1995.07.13
Title 名称 Electrode of indium antimonide Hall unit and production method thereof
Publication Number
公开号
1129360 Publication Date
公开日
1996.08.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L43/04,H01L43/06,H01L43/14
Applicant(s) Name
申请人
Shenyang Instrument Technology Inst., Ministry of Machine-Building Industry
Address 地址 110043
Inventor(s) Name 发明人 Yu Chengmin, Sun Rentao
Attorney & Agent 代理人 YANG GUANG

  
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