Original document(15 pages)  中文版
    An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places the channel layer (12) under a tensile stress.
Application Number
申请号		 95117359 Application Date
申请日		 1995.09.25
Title 名称 Enhanced mobility MOSFET device and method
Publication Number
公开号		 1129358 Publication Date
公开日		 1996.08.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/336;H01L29/78
Applicant(s) Name
申请人		 Motorola Inc.
Address 地址
Inventor(s) Name 发明人 Jon J. Candelaria
Attorney & Agent 代理人 WANG YIPING

  
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