Original document(13 pages) Authorized document(11 pages) 中文版
    A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
Application Number
申请号		 95119333 Application Date
申请日		 1995.11.30
Title 名称 Capacity element of integrated circuit and manufacturing method thereof
Publication Number
公开号		 1129354 Publication Date
公开日		 1996.08.21
Approval Pub. Date 2001.11.21 Granted Pub. Date 2001.11.21
International Classification 分类号 H01L21/02
Applicant(s) Name
申请人		 Matsushita Electronics K.K.
Address 地址
Inventor(s) Name 发明人 Uenomoto Yasushiro;Fujii Eiji;Arita Koji
Attorney & Agent 代理人 SUN JINGGUO

  
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