Original document(5 pages)  中文版
    The high-strength, high-compactness and high-conductivity polythiophene film is made up by making thiophene dissolve in recooked ethyl ether-boron trifluoride complex, adding micro water, using Ag/AgCl as reference electrode, using one or two kinds of the metals or alloys (stainless steel, aluminium, zinc, lead, nickel, platinum and gold) as working electrode and counter-electrode, and adopting electrolysis method under the condition of inert-atmosphere (electrolytic potential is 1.1-1.4V) or constant current method (current density is 0.1-5 mA/cm2, electrode time is 600-30000 sec.). Said film can be made into polythiophene diode, and its conductivity is 50-200 siemens/cm. and its tensile strength is greater than 1000 kg/cm2.
Application Number
申请号		 95110939 Application Date
申请日		 1995.02.16
Title 名称 High-intensive conducting polythiophene thin film, thin-film diode and making method thereof
Publication Number
公开号		 1129353 Publication Date
公开日		 1996.08.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/00
Applicant(s) Name
申请人		 Nanjing Univ.
Address 地址 210093
Inventor(s) Name 发明人 Xue Qi, Shi Gaoquan
Attorney & Agent 代理人 WU SHIHUA

  
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