Original document(53 pages) Authorized document(53 pages) 中文版
    A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.
Application Number
申请号		 02155787 Application Date
申请日		 2002.12.05
Title 名称 Multi-frequency band power amplifier
Publication Number
公开号		 1424762 Publication Date
公开日		 2003.06.18
Approval Pub. Date 2006.03.15 Granted Pub. Date 2006.03.15
International Classification 分类号 H01L27/08;H03F3/21
Applicant(s) Name
申请人		 Mitsubishi Electric Corp.
Address 地址
Inventor(s) Name 发明人 Yamamoto Kazuya;Suzuki Satoshi
Attorney & Agent 代理人 yang kai wang zhongzhong

  
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