Original document(17 pages)  中文版
    A Semiconductor device and a manufacturing method therefor. Gettering layers are formed near element isolation insulating films in an active layer on a buried oxide film. The gettering layers trap mainly heavy metals diffused from the element isolation insulating films into the active layer and prevent deterioration in the characteristics of an element.
Application Number
申请号		 02154791 Application Date
申请日		 2002.12.04
Title 名称 Semiconductor device and manufacture thereof
Publication Number
公开号		 1424767 Publication Date
公开日		 2003.06.18
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/336;H01L29/78
Applicant(s) Name
申请人		 K.K. Toshiba
Address 地址
Inventor(s) Name 发明人 Nakashima Hiroomi
Attorney & Agent 代理人 fu jianjun

  
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