| Original document(32 pages) 中文版 |
To obtain a proper sectional shape of a resist pattern, although the resist pattern is formed using exposure light having a light component entering a resist film at the Brewster angle. The resist film 11 consisting of a chemical amplification type resist material is formed, in which the proportion of the polymer that is protected by a protecting group to the alkali-soluble polymer is 50% or more. After the pattern exposure is performed by irradiating the resist film 11 with KrF excimer laser light 12 (the exposure light having the light component entering the resist film 11 at the Brewster angle) having the NA (numeric aperture) of 0.92, the resist pattern 14 is formed by the development with an alkaline developing solution. |
Application Number
申请号 |
200410003604 |
Application Date
申请日 |
2004.02.03 |
| Title 名称 |
Pattern formation method
|
Publication Number
公开号 |
1523449 |
Publication Date
公开日 |
2004.08.25 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
G03F7/00,G03F7/20 |
Applicant(s) Name
申请人 |
Matsushita Electric Ind. Co., Ltd. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
Endo Masayuki |
| Attorney & Agent 代理人 |
wang huimin |
|
|