The invention discloses a multiple quantum well wave-guide end-to-end coupling process comprising, (1) epitaxially growing the multiple quantum well structure of the device A on the substrate, (2) depositing a layer of dielectric-coating, and mask photo-etching, etching the multiple quantum structure besides the A strips, (3) epitaxially growing the multiple quantum well structure of the device B, (4) mask photo-etching the less satisfying growing quality portion of the A and B interface. (5) extending optimization of the designed body material to the larger area, to serve simultaneously as both the up waveguide of device A and B, and the coupling waveguide between them. The process of the invention may be used to eliminate the inanity and multiple quantum well bending caused by direct linkage, to lower coupling loss and to increase optical output power. The invention can be applied to the making of a plurality of photoelectron integrated device. |