Original document(19 pages)  中文版
    Title: Volatile memory devices with auto-refresh command unit and circuit for controlling auto-refresh operation thereof and related memory systems and operating methods
Application Number
申请号		 200510106784 Application Date
申请日		 2005.10.12
Title 名称 Volatile memory devices with auto-refresh command unit and circuit for controlling auto-refresh operation thereof and related memory systems and operating methods
Publication Number
公开号		 1779853 Publication Date
公开日		 2006.05.31
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C11/401,G11C11/403
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 huang xiaolin wang zhisen

  
3-level non-volatile semiconductor memory device and method of driving the same
Multichip system and method of transferring data therein
Memory device, memory controller and memory system having bidirectional clock lines
Power-on programm with low-power random access memory
System and method for preventing read margin degradation for a memory array
Non-volatile semiconductor memory device and method for reading the same
Rewriting a non-volatile memory, electronic device, storage medium and rewriting method
Page-buffer and non-volatile semiconductor memory including page buffer
Page buffer and multi-state nonvolatile memory device including the same
Word-line boosting circuit for low-voltage non-volatile memory
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