Original document(11 pages)  中文版
    Title: Memory device, memory controller and memory system having bidirectional clock lines
Application Number
申请号		 200510107002 Application Date
申请日		 2005.09.30
Title 名称 Memory device, memory controller and memory system having bidirectional clock lines
Publication Number
公开号		 1779854 Publication Date
公开日		 2006.05.31
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C11/407,G11C11/409,G11C7/00
Applicant(s) Name
申请人		 Infineon Technologies AG
Address 地址
Inventor(s) Name 发明人 Gregorius Peter, Ruckerbauer Hermann, Savignac Dominique, Sichert Christian
Attorney & Agent 代理人 wu limeng zhang zhicheng

  
Power-on programm with low-power random access memory
System and method for preventing read margin degradation for a memory array
Non-volatile semiconductor memory device and method for reading the same
Rewriting a non-volatile memory, electronic device, storage medium and rewriting method
Page-buffer and non-volatile semiconductor memory including page buffer
Page buffer and multi-state nonvolatile memory device including the same
Word-line boosting circuit for low-voltage non-volatile memory
Shift register circuit
Method for producing bit-map information automatically during process of memory test
Method and device for verifying initialized state of nonvolatile memory device
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.