Original document(25 pages)  中文版
    Title: Rewriting a non-volatile memory, electronic device, storage medium and rewriting method
Application Number
申请号		 200510113722 Application Date
申请日		 2005.10.14
Title 名称 Rewriting a non-volatile memory, electronic device, storage medium and rewriting method
Publication Number
公开号		 1779858 Publication Date
公开日		 2006.05.31
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C16/02,G06F9/06,G06F12/00
Applicant(s) Name
申请人		 Sharp KK
Address 地址
Inventor(s) Name 发明人 Ogo Atsushi
Attorney & Agent 代理人 shao yali li xiaoshu

  
Page-buffer and non-volatile semiconductor memory including page buffer
Page buffer and multi-state nonvolatile memory device including the same
Word-line boosting circuit for low-voltage non-volatile memory
Shift register circuit
Method for producing bit-map information automatically during process of memory test
Method and device for verifying initialized state of nonvolatile memory device
Memory test circuit and method
Radiation-resisting electromagnetic cloth
Method for Making scintillator layer for x-ray detector, scintillator layer
Conducting material with anisotropy
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