Original document(64 pages)  中文版
    Title: Page-buffer and non-volatile semiconductor memory including page buffer
Application Number
申请号		 200510108634 Application Date
申请日		 2005.10.10
Title 名称 Page-buffer and non-volatile semiconductor memory including page buffer
Publication Number
公开号		 1779859 Publication Date
公开日		 2006.05.31
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C16/06,G06F12/00
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Lee Sung-soo, Lim Young-ho, Cho Hyun-chul
Attorney & Agent 代理人 lu xiaozhang li xiaoshu

  
Auto-program circuit in nonvolatile semiconductor memory device
Method and circuit for preparing defect in semiconductor memory device
Semiconductor capable of imaging bad block
Page buffer and multi-state nonvolatile memory device including the same
Page buffer and multi-state nonvolatile memory device including the same
Word-line boosting circuit for low-voltage non-volatile memory
Shift register circuit
Method for producing bit-map information automatically during process of memory test
Method and device for verifying initialized state of nonvolatile memory device
Memory test circuit and method
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