Original document(6 pages)  中文版
    The disclosed preparation method for metal nano film dipping Ba-W cathode in microwave device has large emission current density and low evaporation by depositing one layer of 10-100nm metal grain film of Os, Ir, Rh, Ru or other with thickness as 0.1-0.6um.
Application Number
申请号		 200410101870 Application Date
申请日		 2004.12.30
Title 名称 Method for preparing metal nanometer thin film dipped barium-tungsten cathode
Publication Number
公开号		 1801427 Publication Date
公开日		 2006.07.12
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01J9/02
Applicant(s) Name
申请人		 Institute of Electronics, Chinese Academy of Sciences
Address 地址 100080
Inventor(s) Name 发明人 Liu Yanwen
Attorney & Agent 代理人 zhou guocheng

  
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